Low frequency noise in two-dimensional metal-semiconductor field effect transistor
Identifieur interne : 001182 ( Russie/Analysis ); précédent : 001181; suivant : 001183Low frequency noise in two-dimensional metal-semiconductor field effect transistor
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Abstract
Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10-5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz-20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100-180 K and 200-300 K. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low frequency noise in two-dimensional metal-semiconductor field effect transistor</title><author><name sortKey="Levinshtein, M E" uniqKey="Levinshtein M">M. E. Levinshtein</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Rumyantsev, S" uniqKey="Rumyantsev S">S. Rumyantsev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Simin, G S" uniqKey="Simin G">G. S. Simin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Institute of Russian Academy of Science, 194021 St. Petersburg</wicri:regionArea><wicri:noRegion>194021 St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Park, H" uniqKey="Park H">H. Park</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, Dongguk University, 100-715 Seoul, Korea</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Electronic Engineering, Dongguk University, 100-715 Seoul</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Peatman, W C B" uniqKey="Peatman W">W. C. B. Peatman</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author><author><name sortKey="Shur, M S" uniqKey="Shur M">M. S. Shur</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical Engineering, University of Virginia, Charlottesville</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0096968</idno><date when="1996-05-27">1996-05-27</date><idno type="stanalyst">PASCAL 97-0096968 AIP</idno><idno type="RBID">Pascal:97-0096968</idno><idno type="wicri:Area/Main/Corpus">018E36</idno><idno type="wicri:Area/Main/Repository">019C33</idno><idno type="wicri:Area/Russie/Extraction">001182</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530T</term><term>7340Q</term><term>7270</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10<sup>-5</sup> for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations S<sub>I</sub>/I<sup>2</sup> at 300 K was close to S∼1/f<sup>0.6</sup> in the frequency range 20 Hz-20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100-180 K and 200-300 K. © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>68</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low frequency noise in two-dimensional metal-semiconductor field effect transistor</s1></fA08><fA11 i1="01" i2="1"><s1>LEVINSHTEIN (M. E.)</s1></fA11><fA11 i1="02" i2="1"><s1>RUMYANTSEV (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>SIMIN (G. 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